Magnetic memory devices with layered electrodes and methods of fabrication

A memory device, comprising:

• a first electrode comprising:
• a first conductive layer comprising titanium and nitrogen;
• and
• a second conductive layer on the first conductive layer, wherein the second conductive layer comprises tantalum and nitrogen, and wherein the first conductive layer has a multi-orientation cubic crystal lattice texture and a columnar grain structure;
• a second electrode;
• and
• a magnetic tunnel junction (MTJ) between the first and second electrodes, the MTJ comprising:
• a fixed magnet;
• a free magnet;
• and
• a tunnel barrier between the fixed and the free magnet.

A memory device, comprising:

• a first electrode comprising:
• a first conductive layer comprising titanium and nitrogen;
• and
• a second conductive layer on the first conductive layer, wherein the second conductive layer comprises tantalum and nitrogen, and wherein the first conductive layer has a first sidewall and an opposing second sidewall, the second conductive layer has a third sidewall and an opposing fourth sidewall, and the first sidewall extends laterally beyond the third sidewall and the second sidewall extends laterally beyond the fourth sidewall;
• a second electrode;
• and
• a magnetic tunnel junction (MTJ) between the first and second electrodes, the MTJ comprising:
• a fixed magnet;
• a free magnet;
• and
• a tunnel barrier between the fixed and the free magnet.

A memory device, comprising:

• a first electrode comprising:
• a first conductive layer comprising titanium and nitrogen;
• and
• a second conductive layer on the first conductive layer, wherein the second conductive layer comprises tantalum and nitrogen, and wherein at least a portion of the first conductive layer proximal to an interface with the second conductive layer or a portion of the second conductive layer proximal to an interface with a layer of the MTJ further comprises oxygen;
• a second electrode;
• and
• a magnetic tunnel junction (MTJ) between the first and second electrodes, the MTJ comprising:
• a fixed magnet;
• a free magnet;
• and
• a tunnel barrier between the fixed and the free magnet.