Light emitting device and light emitting device assembly
AssigneeXiamen San'an Optoelectronics Co., Ltd.
InventorsShao-Ying Ting, Junfeng Fan, Chia-En Lee, Chen-Ke Hsu
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Abstract
A light emitting device includes a light emitting structure, first and second electrodes, and a shielding layer. The light emitting structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer that are stacked along a stacking direction in such order. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer. The shielding layer is connected to aside of the light emitting structure and is adapted to absorb or reflect incident laser light.
Claims24
A light emitting device, comprising:
- a light emitting structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer that are stacked along a stacking direction in such order;
- a first electrode that is electrically connected to said first-type semiconductor layer;
- a second electrode that is electrically connected to said second-type semiconductor layer;
- and
- a shielding layer that is connected to a side of said light emitting structure and adapted to absorb or reflect incident laser light, and said shielding layer has a stress concentration region, said shielding layer having a uniform profile except for said stress concentration region.
A light emitting device assembly, comprising:
- a substrate having a control circuit;
- at least one light emitting structure that is connected to said substrate and that is electrically connected to said control circuit, said at least one light emitting structure including a first-type semiconductor layer, a second-type semiconductor structure, and an active layer disposed between said first-type and second-type semiconductor layers;
- at least one first electrode that is electrically connected to said first-type semiconductor layer;
- at least one second electrode that is electrically connected to said second-type semiconductor layer;
- a sacrifice structure that is connected to said substrate and that is adjacent to said at least one light emitting structure;
- and
- a shielding layer that is disposed on said substrate and connected to said sacrifice structure, and said shielding layer has a stress concentration region, said shielding layer having a uniform profile except for said stress concentration region.
A light emitting device, comprising:
- a light emitting structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer that are stacked along a stacking direction in such order;
- a first electrode that is electrically connected to said first-type semiconductor layer;
- a second electrode that is electrically connected to said second-type semiconductor layer;
- a sacrifice structure that is adjacent to said light emitting structure for reducing or preventing cracks from propagating to said light emitting structure when said light emitting device is removed from a temporary carrier;
- and
- a shielding layer that is connected to a side of said light emitting structure and adapted to absorb or reflect incident laser light.
Dependencies are inferred from the claim text.