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US 11,380,818 B2Granted
Semiconductor light emitting device
AssigneeSamsung Electronics Co., Ltd.
InventorsJongin Yang, Hankyu Seong, Sunghyun Sim, Jihye Yeon, Hanul Yoo, Jihoon Yun
Life of this patent
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Abstract
A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.
Claims17
A semiconductor light emitting device, comprising:
- at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate;
- a first electrode contacting a substrate-facing surface of the first semiconductor pattern;
- and
- a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern,
- wherein the second electrode extends around at least a part of a substrate-facing surface of the first electrode such that the second electrode at least partially overlaps a portion of the first electrode and the first semiconductor pattern in the vertical direction.
2 more elements
A semiconductor light emitting device, comprising:
- light emitting structures spaced apart from each other on a substrate, each of the light emitting structures including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate;
- first electrodes contacting a substrate-facing surface of the first semiconductor pattern of each of the light emitting structures;
- and
- second electrodes at least partially surrounding and contacting a sidewall of the second semiconductor pattern of each of the light emitting structures,
- wherein the second electrodes extend in a horizontal direction substantially parallel to the upper surface of the substrate to be connected with each other, and
- wherein each of the second electrodes extends around at least a part of a substrate-facing surface of a corresponding one of the first electrodes such that each second electrode at least partially overlaps a portion of a corresponding first electrode and a portion of a corresponding first semiconductor pattern in the vertical direction.
3 more elements
A semiconductor light emitting device, comprising:
- light emitting structures spaced apart from each other on a drive IC substrate, each of the light emitting structures including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the drive IC substrate;
- first electrodes respectively a contacting drive IC substrate-facing surface of the first semiconductor pattern of each of the light emitting structures;
- second electrodes respectively surrounding and contacting a sidewall of the second semiconductor pattern of each of the light emitting structures;
- first contact plugs on the drive IC substrate, each first contact plug contacting a corresponding one of the first electrodes;
- second contact plugs on the drive IC substrate, each second contact plug contacting a corresponding one of the second electrodes;
- photo-conversion patterns on respective second semiconductor patterns of the light emitting structures;
- and
- a conductive division pattern surrounding the photo-conversion patterns, the conductive division pattern being electrically connected to the second electrodes,
- wherein the second electrodes extend in a horizontal direction substantially parallel to the upper surface of the substrate to be connected with each other,
- wherein each of the second electrodes extends around at least a part of a contacting drive IC substrate-facing surface of a corresponding one of the first electrodes such that each second electrode at least partially overlaps a portion of a corresponding first electrode and a portion of a corresponding first semiconductor pattern in the vertical direction.
7 more elements
Dependencies are inferred from the claim text.