High efficiency quantum dot sensitized thin film solar cell with absorber layer
AssigneeMagnolia Solar, Inc.
InventorsGopal G. Pethuraja, Roger E. Welser, Ashok K. Sood
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Abstract
A photovoltaic (PV) device having a quantum dot sensitized interface includes a first conductor layer and a second conductor layer. At least one of the conductor layers is transparent to solar radiation. A quantum dot (nanoparticle) sensitized photo-harvesting interface comprises a photo-absorber layer, a quantum dot layer and a buffer layer, placed between the two conductors. The absorber layer is a p-type material and the buffer layer is an n-type material. The quantum dot layer has a tunable bandgap to cover infrared (IR), visible light and ultraviolet (UV) bands of solar spectrum.
Claims11
A photovoltaic device, comprising:
- a bottom electrode;
- a copper indium gallium diselenide (CIGS) absorber layer;
- a quantum dot (QD) layer proximate the CIGS absorber layer, the QD layer comprising photosensitive nanoparticles;
- a buffer layer proximate the QD layer, the buffer layer comprising at least one of cadmium sulfide (CdS), zinc sulfide (ZnS) or indium sulfide (In2S3);
- and
- a top electrode that is transparent to light,
- wherein the photosensitive nanoparticles comprise InAs nanoparticles and the QD layer comprises the InAs nanoparticles in a GaAs thin film.
A photovoltaic device, comprising:
- a bottom electrode;
- a copper indium gallium diselenide (CIGS) absorber layer;
- a quantum dot (QD) layer proximate the CIGS absorber layer, the QD layer comprising photosensitive nanoparticles;
- a buffer layer proximate the QD layer, the buffer layer comprising at least one of cadmium sulfide (CdS), zinc sulfide (ZnS) or indium sulfide (In2S3);
- and
- a plurality of top electrodes that are transparent to light
- wherein the photosensitive nanoparticles comprise InAs nanoparticles and the QD layer comprises the InAs nanoparticles in a GaAs thin film.
Dependencies are inferred from the claim text.