Semiconductor device with higher breakdown voltage and electronic apparatus

An electronic apparatus, comprising:

• a semiconductor device inside a semiconductor substrate, wherein the semiconductor device comprises:
• a first conductivity-type layer that comprises first conductivity-type impurities;
• a second conductivity-type layer that comprises second conductivity-type impurities, wherein the second conductivity-type impurities are different in polarity from the first conductivity-type impurities;
• an intermediate layer sandwiched between the first conductivity-type layer and the second conductivity-type layer, wherein
• the intermediate layer does not include the first conductivity-type impurities or the second conductivity-type impurities, or includes one of the first conductivity-type impurities or the second conductivity-type impurities at a concentration lower than a concentration of one of the first conductivity-type impurities in the first conductivity-type layer or the second conductivity-type impurities in the second conductivity-type layer, and
• the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer are stacked in a thickness direction of a semiconductor substrate inside the semiconductor substrate;
• and
• a separating layer between each of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer and the semiconductor substrate, wherein the separating layer isolates each of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer from the semiconductor substrate, wherein
• a stacking body of the first conductivity-type layer, the intermediate layer, and the second conductivity-type layer penetrates through the semiconductor substrate in the thickness direction of the semiconductor substrate,
• the first conductivity-type layer is exposed on a first main surface of the semiconductor substrate,
• the second conductivity-type layer is exposed on a second main surface of the semiconductor substrate, and
• the first main surface is opposite to the second main surface.