Semiconductor device structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHou-Yu Chen, Chao-Ching Cheng, Tzu-Chiang Chen, Yu-Lin Yang, I-Sheng Chen
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes an isolation layer formed over a substrate, and a plurality of nanostructures formed over the isolation layer. The semiconductor device structure includes a gate structure wrapped around the nanostructures, and an S/D structure wrapped around the nanostructures. The semiconductor device structure includes a first oxide layer between the substrate and the S/D structure. The first oxide layer and the isolation layer are made of different materials. The first oxide layer is in direct contact with the isolation layer.
Claims20
A semiconductor device structure, comprising:
- an isolation layer formed over a substrate;
- a plurality of nanostructures formed over the isolation layer;
- a gate structure wrapped around the nanostructures;
- an S/D structure wrapped around the nanostructures;
- and
- a first oxide layer between the substrate and the S/D structure, wherein the first oxide layer and the isolation layer are made of different materials, and the first oxide layer is in direct contact with the isolation layer, and a top surface of the first oxide layer is higher than a bottommost surface of the nanostructures.
A semiconductor device structure, comprising:
- an isolation layer formed over a substrate;
- a plurality of nanostructures formed over the isolation layer;
- a gate structure wrapped around the nanostructure;
- an S/D structure wrapped around the nanostructure;
- an inner spacer between the gate structure and the S/D structure, wherein the inner spacer comprises a recessed portion;
- and
- a first oxide layer formed in the recessed portion of the inner spacer, wherein the first oxide layer and the inner spacer are made of different materials.
A semiconductor device structure, comprising:
- an isolation layer formed over a substrate;
- a fin structure formed over an isolation structure;
- a plurality of nanostructures formed over the fin structure;
- a gate structure wrapped around the nanostructure;
- an inner spacer adjacent to the gate structure;
- an S/D structure adjacent to the inner spacer;
- and
- a first oxide layer directly below the S/D structure, wherein an interface between the S/D structure and the first oxide layer is in direct contact with a bottommost nanostructure, and a portion of the S/D structure is lower than a top surface of the first oxide layer.
Dependencies are inferred from the claim text.