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US 11,380,799 B2Granted
Oxide semiconductor film and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkihisa Shimomura, Junichi Koezuka, Kenichi Okazaki, Yasumasa Yamane, Yuhei Sato, Shunpei Yamazaki
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Abstract
To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal to 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.
Claims14
A method of manufacturing of an oxide semiconductor film, comprising steps of:
- placing a substrate so as to face a polycrystalline metal oxide target in a sputtering apparatus;
- and
- generating a plasma between the substrate and the polycrystalline metal oxide target,
- wherein the polycrystalline metal oxide target has a composition in a neighborhood of In:M:Zn=4:2:4.1,
- wherein the M is Al, Ga, Y, or Sn, and
- wherein in the case where a proportion of the In of the polycrystalline metal oxide target is 4, a proportion of the M is greater than or equal to 1.5 and less than or equal to 2.5 and a proportion of the Zn is greater than or equal to 3.1 and less than or equal to 5.1,
- wherein the oxide semiconductor film has a composition in a neighborhood of a solid solution range of an In1+xM1−xO3(ZnO)y structure,
- wherein x satisfies 0<x<0.5,
- wherein y is approximately 1, and
- wherein the oxide semiconductor film has a crystal structure exhibiting a single phase.
7 more elements
A method of manufacturing of an oxide semiconductor film, comprising a step of:
- placing a substrate and a polycrystalline metal oxide target in a sputtering apparatus,
- wherein the polycrystalline metal oxide target has a composition in a neighborhood of In:M:Zn=4:2:4.1,
- wherein the M is Al, Ga, Y, or Sn, and
- wherein in the case where a proportion of the In of the polycrystalline metal oxide target is 4, a proportion of the M is greater than or equal to 1.5 and less than or equal to 2.5 and a proportion of the Zn is greater than or equal to 3.1 and less than or equal to 5.1,
- wherein the oxide semiconductor film has a composition in a neighborhood of a solid solution range of an In1+xM1−xO3(ZnO)y structure,
- wherein x satisfies 0<=<0.5, and
- wherein y is approximately 1.
4 more elements
Dependencies are inferred from the claim text.