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US 11,380,798 B2Granted
Thin-film device
AssigneesWuhan Tianma Micro-Electronics Co., Ltd., Tianma Japan, Ltd.
InventorsKazushige Takechi, Jun Tanaka, Kenji Sera, Yong Yuan
Life of this patent
Estimating the term…
Abstract
A thin-film device includes a polysilicon element and an oxide semiconductor element. The polysilicon element includes a first part made of low-resistive polysilicon. The oxide semiconductor element includes a second part made of low-resistive oxide semiconductor. The first part and the second part are disposed to overlap each other and connected.
Claims15
A thin-film device comprising:
- a polysilicon element;
- and an oxide semiconductor element, wherein the polysilicon element includes a first part made of low-resistive polysilicon, wherein the oxide semiconductor element includes a second part made of low-resistive oxide semiconductor, the first part is included in a polysilicon film, the second part is included in an oxide semiconductor film, and the polysilicon film and the oxide semiconductor film are disposed directly on a co-planar surface of a common insulating layer, and wherein the first part and the second part are disposed to overlap each other and are connected.
A thin-film device comprising:
- a polysilicon element;
- and an oxide semiconductor element, wherein the polysilicon element includes a first part made of low-resistive polysilicon, wherein the oxide semiconductor element includes a second part made of low-resistive oxide semiconductor, wherein the first part and the second part are disposed to overlap each other and are connected, and wherein the first part is connected with the second part through a metal silicide film interposed therebetween, wherein the polysilicon element is a polysilicon thin-film transistor, wherein the oxide semiconductor element is an oxide semiconductor thin-film transistor, wherein the first part is included in a first source/drain of the polysilicon thin-film transistor, and wherein the second part is included in a first source/drain of the oxide semiconductor thin-film transistor.
Dependencies are inferred from the claim text.