Thin film core-shell fin and nanowire transistors

An integrated circuit structure, comprising:

• a fin on an insulator layer above a substrate, the fin having a top and sidewalls, and the fin comprising a first semiconducting oxide material directly on the insulator layer, the first semiconducting oxide material having a bottommost surface;
• a second semiconducting oxide material on at least a portion of the top and sidewalls of the first semiconducting oxide material of the fin, the second semiconducting oxide material having a different composition than the first semiconducting oxide material, and the second semiconducting oxide material having a bottommost surface co-planar with the bottommost surface of the first semiconducting oxide material;
• a gate electrode over the second semiconducting oxide material on the portion of the top and sidewalls of the fin, the gate electrode having a first side opposite a second side;
• a first conductive contact adjacent the first side of the gate electrode, the first conductive contact over a second portion of the top and sidewalls of the fin;
• and
• a second conductive contact adjacent the second side of the gate electrode, the second conductive contact over a third portion of the top and sidewalls of the fin, wherein the first and second conductive contacts have a bottom surface substantially co-planar with a bottom of the fin.

An integrated circuit structure, comprising:

• a nanowire above an insulator layer above a substrate, the nanowire having a top, a bottom and sidewalls, and the nanowire comprising a first semiconducting oxide material;
• a second semiconducting oxide material directly on the top, bottom and sidewalls of the first semiconducting oxide material of the nanowire, the second semiconducting oxide material having a different composition than the first semiconducting oxide material;
• a gate electrode adjacent a first portion of the second semiconducting oxide material on the top, bottom and sidewalls of the nanowire, the gate electrode having a first side opposite a second side;
• a first conductive contact adjacent the first side of the gate electrode, the first conductive contact over a second portion of the second semiconducting oxide material on the top, bottom and sidewalls of the nanowire;
• and
• a second conductive contact adjacent the second side of the gate electrode, the second conductive contact over a third portion of the second semiconducting oxide material on the top, bottom and sidewalls of the nanowire.