Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode toward the second electrode being along a first direction;
• a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the second partial region toward the first partial region crossing the first direction;
• a second semiconductor region of the first conductivity type, the third partial region being between the second partial region and the second semiconductor region in the first direction;
• a third semiconductor region provided between the third partial region and the second semiconductor region, the third semiconductor region being of a second conductivity type;
• a third electrode, a direction from the third semiconductor region toward the third electrode being along the second direction;
• a first member, a direction from the first partial region toward the first member being along the first direction, a direction from the third partial region toward the first member being along the second direction;
• and
• a first insulating member including a first insulating region and a second insulating region, the first insulating region being between the third partial region and the first member in the second direction, the second insulating region being between the third semiconductor region and the third electrode in the second direction,
• the first member being electrically connected to the first partial region,
• the first member being electrically connected to the second electrode, or capable of being electrically connected to the second electrode,
• the first member including at least one selected from the group consisting of a first material, a second material, a third material, a fourth material, a fifth material, and a sixth material,
• the first material including Si, N, and O,
• the second material including a Si—N bond, a N—O bond, and a N—N bond,
• the third material including a Si—N bond, a N—H bond, and a N—N bond,
• the fourth material including Si, C, and a first element, the first element including at least one selected from the group consisting of B and N,
• the fifth material including Si, O, and a second element, the second element including at least one selected from the group consisting of Fe, Au, Ni, Ta, W, and Ti,
• the sixth material including a third element and a fourth element, the third element including at least one selected from the group consisting of In, Al, and Ga, the fourth element including at least one selected from the group consisting of P, As, B, Fe, Au, Ni, Ti, Ta, W, and Ti.

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode toward the second electrode being along a first direction;
• a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the second partial region toward the first partial region crossing the first direction;
• a second semiconductor region of the second conductivity type, the third partial region being between the second partial region and the second semiconductor region in the first direction;
• a first member, a direction from the first partial region toward the first member being along the first direction, a direction from the third partial region toward the first member being along the second direction;
• and
• a first insulating member including a first insulating region, the first insulating region being between the third partial region and the first member in the second direction,
• the first member being electrically connected to the first partial region,
• the first member being electrically connected to the second electrode, or capable of being electrically connected to the second electrode,
• a resistivity of the first member being greater than a resistivity of the first partial region and less than a resistivity of the first insulating member.