Group III-nitride based vertical power device and system

A vertical power system comprising at least one of an inverter, a half-bridge rectifier, a full-bridge rectifier, a half-wave rectifier, or a full-wave rectifier that includes a vertical power device, the vertical power device comprising:

• a substrate;
• a group III-Nitride based device stack formed on the substrate, the group III-Nitride based device stack comprising a body layer of a first conduction type between a lower layer of a second conduction type and an upper layer of the second conduction type, wherein the body layer, the lower layer, and the upper layer each comprise a group III-Nitride material;
• a passivation layer;
• a first vertical group III-Nitride based device and a second vertical group III-Nitride based device formed in the group III-Nitride based device stack, wherein the first vertical group III-Nitride based device and the second vertical group III-Nitride based device form an electrical connection, the first vertical group III-Nitride based device comprising a first top contact and a first bottom contact, and the second vertical group III-Nitride based device comprising a second top contact and a second bottom contact, the first top contact and the second top contact being formed at a top side of the vertical power device to pass through the passivation layer and be exposed at the top side, and the first bottom contact and the second bottom contact being formed at a bottom side of the vertical power device to pass through the substrate and be exposed at the bottom side, and the first bottom contact comprising two vias that are vertically aligned with the first top contact and that pass through the substrate;
• and
• a first vertical device isolation structure that isolates the first vertical group III-Nitride based device from the second vertical group III-Nitride based device.

A process for fabricating a vertical power device, the process comprising:

• providing a substrate;
• forming a group III-Nitride based device stack on the substrate, the group III-Nitride based device stack comprising a body layer of a first conduction type between a lower layer of a second conduction type and an upper layer of the second conduction type, wherein the body layer, the lower layer, and the upper layer each comprise a group III-Nitride material;
• forming a passivation layer;
• forming a first vertical group III-Nitride based device and a second vertical group III-Nitride based device in the group III-Nitride based device stack, wherein the first vertical group III-Nitride based device and the second vertical group III-Nitride based device form an electrical connection, the first vertical group III-Nitride based device comprising a first top contact and a first bottom contact, and the second vertical group III-Nitride based device comprising a second top contact and a second bottom contact, the first top contact and the second top contact being formed at a top side of the vertical power device to pass through the passivation layer and be exposed at the top side, and the first bottom contact and the second bottom contact being formed at a bottom side of the vertical power device to pass through the substrate and be exposed at the bottom side, and the first bottom contact comprising two vias that are vertically aligned with the first top contact and that pass through the substrate;
• and
• forming a first vertical device isolation structure that isolates the first vertical group III-Nitride based device from the second vertical group III-Nitride based device.