Insulating structure of high electron mobility transistor and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsChun-Ming Chang, Wen-Jung Liao
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Abstract
An insulating structure of a high electron mobility transistor (HEMT) is provided, which comprises a gallium nitride layer, an aluminum gallium nitride layer disposed on the gallium nitride layer, a groove disposed in the gallium nitride layer and the aluminum gallium nitride layer, an insulating layer disposed in the groove, wherein a top surface of the insulating layer is aligned with a top surface of the aluminum gallium nitride layer, and a passivation layer, disposed on the aluminum gallium nitride layer and the insulating layer.
Claims4
An insulating structure of a high electron mobility transistor (HEMT), comprising:
- a gallium nitride layer;
- an aluminum gallium nitride layer on the gallium nitride layer;
- a buffer layer disposed below the gallium nitride layer;
- two grooves located in the gallium nitride layer and the aluminum gallium nitride layer, wherein a bottom surface of each groove is aligned with a bottom surface of the buffer layer;
- an insulating layer located in the two grooves;
- and
- a mask layer disposed on the aluminum gallium nitride layer and disposed beside the insulating layer, wherein a top surface of the insulating layer is higher than a top surface of the mask layer, and wherein the insulating layer does not cover on the top surface of the mask layer.
Dependencies are inferred from the claim text.