Contact and via structures for semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMrunal A. Khaderbad, Keng-Chu Lin
Life of this patent
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Abstract
The structure of a semiconductor device with source/drain contact structures and via structures and a method of fabricating the semiconductor device are disclosed. A method for fabricating a semiconductor device includes forming a source/drain (S/D) region on a substrate, forming a S/D contact structure on the S/D region, and forming a via structure on the S/D contact structure. The forming of the via structure includes forming a via opening on the S/D contact structure, forming a non-metal passivation layer on sidewalls of the via opening, and depositing a via plug within the via opening in a bottom-up deposition process.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming a source/drain (S/D) region on a substrate;
- forming a S/D contact structure on the S/D region, wherein the forming the S/D contact structure comprises:
- forming a S/D contact opening,
- forming a silicide layer on an exposed surface of the S/D region within the S/D contact opening,
- providing a mixture of a passivation gas, an etching gas, and a plasma gas,
- forming a non-metal passivation layer with a first portion on sidewalls of the S/D contact opening and a second portion on the silicide layer,
- etching the first and second portions of the non-metal passivation layer at first and second etch rates, respectively, wherein the first etch rate is less than the second etch rate,
- forming a trench in the silicide layer, and
- depositing a S/D contact plug within the S/D contact opening in a bottom-up deposition process;
- and
- forming a via structure on the S/D contact structure.
A method, comprising:
- forming an epitaxial source/drain (S/D) region within a substrate;
- forming a dielectric layer on the epitaxial S/D region;
- forming a contact opening within the dielectric layer;
- forming a silicide layer on an exposed surface of the epitaxial S/D region within the contact opening;
- selectively forming a non-metal passivation layer on sidewalls of the contact opening, wherein the selectively forming the non-metal passivation layer comprises depositing a non-metal passivation material at a substantially constant deposition rate and etching the non-metal passivation material at an etch rate that varies along the sidewalls of the contact opening;
- forming a trench in the silicide layer;
- and
- depositing a contact plug in a bottom-up deposition process to fill the trench and the contact opening.
A method, comprising:
- forming a fin structure on a substrate;
- forming an epitaxial source/drain (S/D) region on the fin structure;
- forming a dielectric layer on the epitaxial S/D region;
- forming a contact opening within the dielectric layer;
- forming a silicide layer on an exposed surface of the epitaxial S/D region within the contact opening;
- selectively forming a non-metal passivation layer on sidewalls of the contact opening;
- forming a trench in the silicide layer during the selectively forming the non-metal passivation layer;
- and
- forming a contact plug in a bottom-up deposition process to fill the trench and the contact opening.
Dependencies are inferred from the claim text.