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US 11,380,765 B2Granted
Structure and intermediate structure
AssigneesSciocs Company Limited, Sumitomo Chemical Company, Limited
InventorFumimasa Horikiri
Life of this patent
Estimating the term…
Abstract
This invention provides a novel structure formed from GaN material using PEC etching. The structure comprises a member constituted by a single crystal of gallium nitride and the member includes a recess having an aspect ratio of 5 or more.
Claims7
A structure comprising:
- a first member constituted by a single crystal of gallium nitride,
- the first member including a recess,
- the recess having an aspect ratio of 5 or more and a depth of 5 μm or more, and
- a bottom of the recess being constituted by the gallium nitride, and
- an upper face of the first member outside of an aperture of the recess being c face;
- and
- a second member loaded inside the recess.
4 more elements
Dependencies are inferred from the claim text.