US 11,380,763 B2 · Contact structures for n-type diamond

Abstract

Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.

Claims31

Dependent claims

An electronic device comprising:

a n-type diamond layer;
a nanostructured carbon layer that is doped with nitrogen, the nanostructured carbon layer comprising an average grain size in a range from 10 nm to 1000 nm and a plurality of grain boundaries that are incorporated with the nitrogen, wherein the nanostructured carbon layer is on the n-type diamond layer;
and
a metal contact layer on the nanostructured carbon layer, wherein the metal contact layer and the nanostructured carbon layer form a contact structure in conductive electrical communication with the n-type diamond layer.

1 more element

Dependencies are inferred from the claim text.

Contact structures for n-type diamond

Life of this patent

Contact structures for n-type diamond

Life of this patent

Abstract

Claims31