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US 11,380,762 B2Granted
Semiconductor device having semiconductor alloy layer adjacent a gate structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Chao Huang, Yee-Chia Yeo, Chao-Hsiung Wang, Chun-Chieh Lin, Chenming Hu
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Abstract
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.
Claims20
A semiconductor device comprising:
- a silicon substrate;
- a gate structure formed over the silicon substrate;
- source and drain regions disposed one on each side of the gate structure;
- a capping layer disposed under the gate structure;
- a silicon germanium region extending under the capping layer and the gate structure;
- and
- a silicide region overlying the source and drain regions and physically contacting the silicon of the substrate, wherein the silicide region extends further into the substrate than the silicon germanium region, and wherein the silicide region physically interfaces the silicon germanium region.
4 more elements
A semiconductor device comprising:
- a silicon substrate;
- a gate structure formed over the silicon substrate;
- a silicon layer disposed below the gate structure;
- a first semiconductor alloy layer portion over the substrate and below the gate structure and the silicon layer, the first semiconductor alloy layer portion being formed of silicon germanium;
- and
- a second semiconductor alloy layer portion overlying source and drain regions adjacent the gate structure, the second semiconductor alloy layer portion being formed of a silicide, wherein the second semiconductor alloy layer portion extends further into the substrate than the silicon layer, and wherein the second semiconductor alloy layer portion interfaces the first semiconductor alloy layer, and wherein the silicon layer is free of an interface with the second semiconductor alloy layer.
3 more elements
A semiconductor device comprising:
- a silicon substrate;
- a gate structure formed over the silicon substrate;
- source and drain regions disposed one on each side of the gate structure;
- a silicon region disposed under the gate structure and over the silicon substrate;
- a silicon germanium region extending under the silicon region and under the gate structure;
- and
- a silicide region overlying the source and drain regions and having a side surface physically contacting the silicon substrate, wherein the silicide region extends further into the silicon substrate than the silicon germanium region.
4 more elements
Dependencies are inferred from the claim text.