Metal terminal edge for semiconductor structure and method of forming the same

A semiconductor device, comprising:

• a semiconductor substrate with a lightly-doped epitaxial layer of a first conductivity type;
• and
• an edge termination having a first metal layer and a second metal layer, wherein the first metal layer is deposited and patterned spacedly on the epitaxial layer and the second metal layer is deposited and patterned onto at least a portion of the spaced first metal layer and onto the epitaxial layer between said spaced first metal layer, and wherein the first metal layer comprises a high work function metal, while the second metal layer comprises a low work function metal and a junction biased Schottky (JBS) bars and the edge termination is formed when the low work function metal layer is in direct contact with the high work function metal,
• wherein an optimal size of the edge termination of the first metal is between 30 μm and 80 μm, with a minimal 10 μm overlap of the second metal on top of the first metal.