Silicon carbide device with Schottky contact

A silicon carbide device, comprising:

• a silicon carbide body comprising a source region, a cathode region and separation regions,
• a stripe-shaped gate structure extending along a first direction and directly adjoining the source region and directly adjoining the separation regions, and
• a first load electrode,
• wherein along the same first direction along which the stripe-shaped gate structure extends, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region,
• wherein the source region and the first load electrode form an ohmic contact, and
• wherein the first load electrode and the cathode region form a Schottky contact.

A silicon carbide device, comprising:

• a silicon carbide body comprising a source region, a cathode region and separation regions,
• a stripe-shaped gate structure extending along a first direction and adjoining the source region and adjoining the separation regions, and
• a first load electrode,
• wherein along the same first direction along which the stripe-shaped gate structure extends, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region,
• wherein the source region and the first load electrode form an ohmic contact,
• wherein the first load electrode and the cathode region form a Schottky contact, and
• wherein the stripe-shaped gate structure extends from a first surface of the silicon carbide body into the silicon carbide body.