Manufacturing method of semiconductor device and semiconductor device
AssigneeFujian Jinhua Integrated Circuit Co., Ltd.
InventorsJanbo Zhang, Li-Wei Feng, Yu-Cheng Tung
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Abstract
The present invention provides a manufacturing method of a semiconductor device and a semiconductor device. A semiconductor device is provided, the semiconductor device includes a substrate, a stacked structure disposed on the substrate, the substrate comprises a cell array region, a peripheral circuit region and a middle region between the cell array region and the peripheral circuit region, a first trench located in the middle region, a second support layer located on an upper surface of the stacked structure, wherein parts of the second support layer is disposed in the first trench, and a capacitor structure located in the cell array region.
Claims14
A semiconductor device, comprising:
- a substrate;
- a stacked structure disposed on the substrate, the substrate comprises a cell array region, a peripheral circuit region and a middle region between the cell array region and the peripheral circuit region;
- a first trench located in the middle region;
- a second trench disposed between the first trench and the peripheral circuit region;
- a second support layer located on an upper surface of the stacked structure, wherein parts of the second support layer is disposed in the first trench and the second trench to form a first guard ring and a second guard ring in the middle region, wherein the second guard ring structure surrounds the first guard ring structure;
- and
- a capacitor structure located in the cell array region.
A method of forming a semiconductor device, comprising:
- forming a substrate;
- forming a stacked structure on the substrate, wherein the substrate comprises a cell array region, a peripheral circuit region and an middle region between the cell array region and the peripheral circuit region;
- forming a first trench in the middle region;
- forming a second trench between the first trench and the peripheral circuit region;
- forming a second support layer located on an upper surface of the stacked structure, wherein parts of the second support layer is disposed in the first trench and the second trench to form a first guard ring and a second guard ring in the middle region, wherein the second guard ring structure surrounds the first guard ring structure;
- and
- forming a capacitor structure in the cell array region.
Dependencies are inferred from the claim text.