Display panel including thin film transistors having different semiconductor materials from each other

A display panel comprising:

• a base layer;
• a first thin film transistor disposed on the base layer and comprising:
• a silicon semiconductor pattern;
• a first control electrode spaced apart from the silicon semiconductor pattern;
• a first input electrode connected to a first side of the silicon semiconductor pattern;
• and a first output electrode connected to a second side of the silicon semiconductor pattern;
• a second thin film transistor disposed on the base layer and comprising:
• an oxide semiconductor pattern;
• a second control electrode spaced apart from the oxide semiconductor pattern;
• a second input electrode connected to a first side of the oxide semiconductor pattern;
• and
• a second output electrode connected to a second side of the oxide semiconductor pattern;
• an organic light emitting diode comprising:
• a first electrode connected to the first thin film transistor;
• a second electrode disposed on the first electrode;
• and an emission layer disposed between the first electrode and the second electrode;
• and
• a first insulating layer disposed between the organic light emitting diode and the silicon semiconductor pattern, wherein the first insulating layer is disposed on the silicon semiconductor pattern, wherein the first insulating layer includes a plurality of openings exposing the first side and the second side of the silicon semiconductor pattern, respectively,
• wherein the first input electrode and the first output electrode are positioned in first and second openings of the plurality of openings, respectively, and uppermost surfaces and lowermost surfaces of the first input electrode and the first output electrode are substantially coplanar with an uppermost surface and a lowermost surface of the first insulating layer adjacent to the first and second openings, and
• wherein a thicknesses of the first input electrode and the first output electrode extending contiguously between the uppermost and the lowermost surfaces of the first input electrode and the first output electrode, respectively, in a first direction orthogonal to an upper surface of the base layer are substantially equal to a thickness of the first insulating layer in the first direction, extending between the uppermost surface and the lowermost surface of the first insulating layer adjacent to the first and second openings.