Image sensor device
AssigneeSamsung Electronics Co., Ltd.
InventorsMin-Woong Seo, JungChak Ahn, Jae-kyu Lee
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Abstract
An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.
Claims20
An image sensor device comprising:
- a digital pixel including a photo detector, a comparator, and a memory circuit;
- a pixel driver configured to control the digital pixel;
- and
- a digital logic circuit configured to perform a digital signal processing operation on a digital signal output from the digital pixel, wherein
- the photo detector and a first portion of the comparator are formed in a first semiconductor die,
- a second portion of the comparator, the memory circuit including a plurality of random access memory cells, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and
- the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.
An image sensor device comprising:
- a digital pixel including a photo detector, a comparator, and a memory circuit;
- a pixel driver configured to control the digital pixel;
- and
- a digital logic circuit configured to perform a digital signal processing operation on a digital signal output from the digital pixel, wherein
- the photo detector, a first portion of the comparator, and a first portion of the pixel driver are formed in a first semiconductor die,
- a second portion of the comparator, the memory circuit including a plurality of random access memory cells, and a second portion of the pixel driver are formed in a second semiconductor die under the first semiconductor die, and
- the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.
An image sensor device comprising:
- a first semiconductor die including a first portion of a digital pixel;
- a second semiconductor die disposed under the first semiconductor die, the second semiconductor die including a second portion of the digital pixel, the second portion of the digital pixel including at least a memory circuit having a plurality of random access memory cells configured to store a code based on a comparison signal;
- first connection structures configured to connect the second portion of the digital pixel with the first portion of the digital pixel;
- a third semiconductor die disposed under the second semiconductor die, the third semiconductor die including a digital logic circuit, the digital logic circuit configured to receive a digital signal from the second portion of the digital pixel;
- and
- second connection structures configured to connect the digital logic circuit with the second portion of the digital pixel.
Dependencies are inferred from the claim text.