Array substrate and manufacturing method therefor, display panel, and display device

A manufacturing method of an array substrate, comprising:

• forming a photosensitive component on a base substrate, wherein forming the photosensitive component comprises forming a photosensitive layer;
• and
• forming a thin film transistor (TFT), wherein the TFT is located at a side of the photosensitive component away from the base substrate;
• wherein the photosensitive layer has an orthographic projection on the base substrate not falling within an orthographic projection of the TFT on the base substrate, and
• wherein forming the photosensitive component further comprises forming a first electrode before forming the photosensitive layer and forming a second electrode after forming the photosensitive layer,
• forming the TFT further comprises forming an active layer and forming an interlayer insulation layer, wherein an orthographic projection of the active layer on the base substrate falls within an orthographic projection of the first electrode on the base substrate;
• and
• the method further comprises:
• forming a buffer layer after forming the photosensitive component and before forming the active layer;
• forming a first through hole and a second through hole that run through both the interlayer insulation layer and the buffer layer;
• forming a conductive film;
• and
• patterning the conductive film to form a conductive layer, a source electrode of the TFT and a drain electrode of the TFT, wherein the source electrode and the drain electrode are electrically connected with the active layer, respectively, one of the source electrode and the drain electrode is electrically connected with the first electrode via the first through hole, and the conductive layer is electrically connected with the second electrode.

A manufacturing method of an array substrate, comprising:

• forming a photosensitive component, wherein forming the photosensitive component comprises forming a photosensitive layer on a base substrate;
• and
• forming a thin film transistor (TFT) after forming the photosensitive component;
• wherein the photosensitive layer has an orthographic projection on the base substrate not falling within an orthographic projection of the TFT on the base substrate, and
• wherein forming the photosensitive component further comprises forming a first electrode before forming the photosensitive layer and forming a second electrode after forming the photosensitive layer,
• forming the TFT further comprises forming an active layer and forming an interlayer insulation layer;
• wherein an orthographic projection of the active layer on the base substrate falls within an orthographic projection of the first electrode on the base substrate, and
• the method further comprises:
• forming a buffer layer after forming the photosensitive component and before forming the active layer;
• forming a first through hole and a second through hole that run through both the interlayer insulation layer and the buffer layer;
• forming a conductive film;
• and
• patterning the conductive film to form a conductive layer, and a source electrode of the TFT and a drain electrode of the TFT, wherein the source electrode and the drain electrode are electrically connected with the active layer, respectively, one of the source electrode and the drain electrode is electrically connected with the first electrode via the first through hole, and the conductive layer is electrically connected with the second electrode.