Array substrate and manufacturing method thereof
AssigneeTcl China Star Optoelectronics Technology Co., Ltd.
InventorMeng Chen
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Abstract
An array substrate and manufacturing method thereof are provided. The array substrate includes: a substrate; a first gate electrode insulating layer disposed on the substrate, wherein the first gate electrode insulating layer has a recess therein; a gate electrode layer disposed in the recess of the first gate electrode insulating layer; a second gate electrode insulating layer covering the first gate electrode insulating layer and the gate electrode layer; and an active layer disposed on the second gate electrode insulating layer.
Claims15
An array substrate, comprising:
- a substrate;
- a first gate electrode insulating layer disposed on the substrate, wherein the first gate electrode insulating layer has a recess therein;
- a gate electrode layer disposed in the recess of the first gate electrode insulating layer, wherein a thickness of the gate electrode layer is larger than a thickness of the recess;
- a second gate electrode insulating layer covering the first gate electrode insulating layer and the gate electrode layer, wherein the second gate electrode insulating layer has a step coverage over the gate electrode layer not in the recess;
- and
- an active layer disposed on the second gate electrode insulating layer.
A method of manufacturing an array substrate, comprising:
- a step S1 of providing a substrate;
- a step S2 of depositing a gate electrode insulating material on the substrate to form a first gate electrode insulating film;
- a step S3 of patterning the first gate electrode insulating film to form a first gate electrode insulating layer, wherein the first gate electrode insulating layer has a recess therein;
- a step S4 of depositing a gate electrode material on the first gate electrode insulating layer, and forming a gate electrode film in the recess;
- a step S5 of wet etching the gate electrode film to remove the gate electrode film on the first gate electrode insulating layer, and form a gate electrode layer in the recess, wherein a thickness of the gate electrode layer is larger than a thickness of the recess;
- a step S6 of depositing a gate electrode insulating material on the first gate electrode insulating layer and the gate electrode layer to form a second gate electrode insulating layer, wherein the second gate electrode insulating layer has a step coverage over the gate electrode layer not in the recess;
- and
- a step S7 of forming an active layer on the second gate electrode insulating layer.
Dependencies are inferred from the claim text.