Analog non-volatile memory device using poly ferroelectric film with random polarization directions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChih-Sheng Chang
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Abstract
A semiconductor device includes a ferroelectric field-effect transistor (FeFET), wherein the FeFET includes a substrate; a source region in the substrate; a drain region in the substrate; and a gate structure over the substrate and between the source region and the drain region. The gate structure includes a gate dielectric layer over the substrate; a ferroelectric film over the gate dielectric layer; and a gate electrode over the ferroelectric film.
Claims20
A semiconductor device comprising:
- a ferroelectric field-effect transistor (FeFET) comprising:
- a substrate;
- a source region in the substrate;
- a drain region in the substrate;
- and
- a gate structure over the substrate and between the source region and the drain region, wherein the gate structure comprises:
- a gate dielectric layer over the substrate;
- a ferroelectric film over the gate dielectric layer;
- and
- a gate electrode over the ferroelectric film, wherein a threshold voltage of the FeFET is adjustable and changes continuously within a pre-determined range.
A semiconductor device comprising:
- a substrate;
- and
- a ferroelectric tunnel junction (FTJ) over the substrate, the FTJ comprising:
- a bottom electrode over the substrate;
- a dielectric layer over the bottom electrode;
- an internal metal layer over the dielectric layer;
- a ferroelectric layer over the internal metal layer;
- and
- a top electrode over the ferroelectric layer, wherein a tunneling electroresistance (TER) of the FTJ is adjustable and have more than two different values.
A method of forming a device that comprises a ferroelectric field-effect transistor (FeFET), the method comprising:
- forming a gate dielectric layer over a substrate;
- forming an internal metal layer over the gate dielectric layer;
- forming a ferroelectric layer over the internal metal layer;
- and
- forming a gate electrode over the ferroelectric layer, wherein a threshold voltage of the FeFET is adjustable by a programming voltage, wherein the threshold voltage has a first fixed value when the programming voltage changes from zero to a first voltage, wherein the threshold voltage changes continuously from the first fixed value to a second fixed value when the programming voltage changes from the first voltage to a second voltage, and wherein the threshold voltage has a second fixed value when the programming voltage rises above the second voltage.
Dependencies are inferred from the claim text.