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US 11,380,692 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorKi Hong Lee
Life of this patent
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Abstract
A semiconductor device includes a stacked structure, channel layers passing through the stacked structure, a well plate located under the stacked structure, a source layer located between the stacked structure and the well plate, a connection structure coupling the channel layers to each other and including a first contact contacting the source layer and a second contact contacting the well plate, and an isolation pattern insulating the source layer and the well plate from each other.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a sacrificial structure on a well plate;
- forming a stacked structure on the sacrificial structure;
- forming a semiconductor layer passing through the stacked structure;
- forming a slit passing through the stacked structure to expose the sacrificial structure;
- forming an opening by removing the sacrificial structure through the slit;
- forming an isolation pattern on the well plate exposed through the opening;
- and
- forming a first source layer in the opening, wherein the first source layer is insulated from the well plate by the isolation pattern.
5 more elements
Dependencies are inferred from the claim text.