Semiconductor devices including diffusion break regions

A semiconductor device comprising:

• a substrate comprising a first region and a second region;
• a plurality of first active fins extending in a first direction on the first region, two first active fins of the plurality of first active fins defining a first fin recess in the first region of the substrate;
• a plurality of second active fins extending parallel to the plurality of first active fins on the second region of the substrate;
• a first gate structure and a second gate structure, each of the first and second gate structures traversing one of the plurality of first active fins and one of the plurality of second active fins and having a first width in the first direction;
• first and second outer spacers between the first and second gate structures, the first and second outer spacers being spaced apart from each other by a first distance in the first direction, the first distance being at least twice the first width, the first and second outer spacers defining a first gate trench therebetween, and the first gate trench being connected to the first fin recess;
• a double diffusion break region in the first fin recess and the first gate trench;
• a lower diffusion break region in the second region of the substrate between two second active fins of the plurality of second active fins;
• first and second inside spacers on the lower diffusion break region between the first and second outer spacers, the first outer spacer, the first inner spacer, the second inner spacer, and the second outer spacer being sequentially arranged along the first direction, and two second gate trenches being defined by a pair of the first outer spacer and the first inner spacer and a pair of the second inner spacer and the second outer spacer;
• and
• two upper diffusion break regions in the two second gate trenches, respectively.