Semiconductor device with superlattice fin
AssigneeQUALCOMM Incorporated
InventorsJunjing Bao, Ye Lu, Chenjie Tang, Peijie Feng
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Abstract
Certain aspects of the present disclosure relate to a semiconductor device (e.g., a gate-all-around (GAA) semiconductor device) comprising at least one superlattice fin. One example superlattice fin includes a first plurality of nanosheets composed of a first semiconductor material and a second plurality of nanosheets composed of a second semiconductor material, the second semiconductor material being different from the first semiconductor material, wherein a width of a first nanosheet in the first plurality of nanosheets differs from a width of a second nanosheet in the second plurality of nanosheets, the second nanosheet being adjacent to the first nanosheet.
Claims20
A semiconductor device comprising at least one superlattice fin, the superlattice fin comprising:
- a first plurality of nanosheets composed of a first semiconductor material;
- a second plurality of nanosheets composed of a second semiconductor material, the second semiconductor material being different from the first semiconductor material, wherein a width of a first nanosheet in the first plurality of nanosheets differs from a width of a second nanosheet in the second plurality of nanosheets, the second nanosheet being adjacent to the first nanosheet;
- and
- a gate structure surrounding three sides of the superlattice fin.
A method for fabricating a semiconductor device, comprising:
- forming at least one superlattice fin having a first plurality of nanosheets composed of a first semiconductor material and a second plurality of nanosheets composed of a second semiconductor material, the second semiconductor material being different from the first semiconductor material, wherein a width of a first nanosheet in the first plurality of nanosheets differs from a width of a second nanosheet in the second plurality of nanosheets, the second nanosheet being adjacent to the first nanosheet;
- and
- forming a gate structure surrounding three sides of the superlattice fin.
Dependencies are inferred from the claim text.