Semiconductor device for a low-loss antenna switch

A semiconductor device, comprising:

• a substrate;
• a first well, a second well, and a third well that are disposed within the substrate;
• first and second doped regions disposed in a fourth well above the first well, wherein the second well is interposed between the third and fourth wells;
• and
• a third doped region disposed in the third well;
• wherein the third doped region is configured to be floated.

A semiconductor device, comprising:

• a metal-oxide-semiconductor transistor disposed on a first well of a first conductivity type, wherein the metal-oxide-semiconductor transistor comprises:
• a first terminal configured to be as a drain terminal;
• a second terminal configured to be as a source terminal, wherein the first and second terminals are coupled to a ground;
• a third terminal configured to be a body terminal, wherein the third terminal is coupled to a first resistor that is coupled to the ground;
• a fourth terminal coupled to a second resistor that is coupled to a voltage terminal;
• and
• a fifth terminal configured to be floated.