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US 11,380,678 B2Granted
Metamorphic high electron mobility transistor-heterojunction bipolar transistor integration
AssigneeQUALCOMM Incorporated
InventorsRanadeep Dutta, Je-Hsiung Lan, Jonghae Kim
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Abstract
A semiconductor device having metamorphic high electron mobility transistor (HEMT)-heterojunction bipolar transistor (HBT) integration on a semiconductor substrate. An example semiconductor device generally includes a semiconductor substrate, a bipolar junction transistor (BJT) disposed above the semiconductor substrate and comprising indium, and a HEMT disposed above the semiconductor substrate and comprising indium.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate, wherein the semiconductor substrate comprises silicon;
- a bipolar junction transistor (BJT) disposed above the semiconductor substrate and comprising indium phosphide;
- and
- a high electron mobility transistor (HEMT) disposed above the semiconductor substrate and comprising indium.
1 more element
A method of fabricating a semiconductor device, comprising:
- forming a semiconductor stack structure above a semiconductor substrate, wherein the semiconductor substrate comprises silicon and wherein the semiconductor stack structure comprises indium;
- forming a bipolar junction transistor (BJT) above the semiconductor stack structure, wherein the BJT comprises indium phosphide;
- and
- forming a high electron mobility transistor (HEMT) from the semiconductor stack structure.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- a bipolar junction transistor (BJT) disposed above the semiconductor substrate and comprising indium phosphide;
- and
- a high electron mobility transistor (HEMT) disposed above the semiconductor substrate and comprising indium, wherein the BJT is a heterojunction bipolar transistor (HBT) and wherein the HBT further comprises:
- a collector layer disposed above the semiconductor substrate and comprising indium phosphide;
- a base layer disposed above the collector layer and comprising indium gallium arsenide;
- and
- an emitter layer disposed above the base layer and comprising indium phosphide.
5 more elements
Dependencies are inferred from the claim text.