Electrostatic discharge device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWun-Jie Lin, Han-Jen Yang, Yu-Ti Su
Life of this patent
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Abstract
An Electro-Static Discharge (ESD) includes a first well having a first conductivity type on a substrate. The device further includes a second well within the first well. The second well has a second conductivity type. The device further includes a third well within the first well. The third well has the second conductivity type. The device further includes a first gate device disposed over the first well, a plurality of active regions between the first gate device and the dummy gate, and a dummy gate disposed within a space between the active regions. The dummy gate is positioned over a space between the second and third wells.
Claims20
An Electro-Static Discharge (ESD) device comprising:
- a first well having a first conductivity type on a substrate;
- a first gate device disposed over the first well;
- a second gate device disposed over the first well;
- a second well within the first well, the second well having a second conductivity type and extending between the first gate and the second gate;
- a plurality of active regions between the first gate device and the second gate;
- and
- a dummy gate disposed within a space between the active regions, the dummy gate being positioned over the second well.
An integrated circuit device comprising:
- at least two active regions on a substrate, the active regions being disposed between a first gate device and a second gate device;
- and
- at least one dummy gate disposed between the two active regions and between the first gate device and the second gate device;
- wherein the first gate device and the second device are positioned over a first well having a first conductivity type and the dummy gate is positioned over a second well having a second conductivity type.
An integrated circuit device comprising:
- at least two gate devices, a dummy gate, and at least two active regions on a substrate, the active regions being positioned between a first one of the gate devices and the dummy gate device, wherein each active region is substantially uniform in length;
- wherein the first gate device is positioned over a first well having a first conductivity type and the dummy gate is positioned over a second well having a second conductivity type.
Dependencies are inferred from the claim text.