Method and device for electrical overstress and electrostatic discharge protection
AssigneeSemtech Corporation
InventorsDavid J. Rose, William A. Russell, Jonathan Clark
Life of this patent
Estimating the term…
Abstract
A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.
Claims20
A semiconductor device, comprising:
- a transmission line;
- a junction field-effect transistor (JFET) coupled in series with the transmission line, wherein a gate terminal of the JFET is electrically coupled to the transmission line;
- a resistor coupled in series with the transmission line between the JFET and the gate terminal of the JFET, wherein the resistor includes a fixed resistance rating or value;
- and
- a parallel protection circuit electrically coupled between the transmission line and a ground node.
A semiconductor device, comprising:
- a junction field-effect transistor (JFET);
- and
- a resistor comprising a first terminal of the resistor coupled to a conduction terminal of the JFET and a second terminal of the resistor coupled to a gate terminal of the JFET, wherein the resistor includes a fixed resistance rating or value.
A method of making a semiconductor device, comprising:
- providing a transmission line;
- coupling a junction field-effect transistor (JFET) in series with the transmission line;
- coupling a gate terminal of the JFET to the transmission line;
- and
- coupling a resistor in series with the transmission line between the JFET and the gate terminal of the JFET, wherein the resistor includes a fixed resistance rating or value.
Dependencies are inferred from the claim text.