Integrated circuit

An integrated circuit, comprising:

• a resistive structure electrically coupled between a first voltage terminal and a pad;
• a first active region coupled to the pad and the resistive structure;
• a second active region coupled between the first active region and a second voltage terminal different from the first voltage terminal;
• a third active region of a first type coupled to the pad and the first active region;
• a fourth active region of the first type coupled between the third active region and the second voltage terminal, wherein a width of the third active region is greater than a width of the fourth active region;
• and
• a gate disposed between the third and fourth active regions;
• wherein the first active region and the second active region are included in a structure operating as a first transistor, and the third active region, the fourth active region, and the gate are included in a structure operating as a second transistor;
• wherein in operation, the resistive structure is configured to operate with a first supply voltage received from the first voltage terminal and the second transistor is configured to discharge electrostatic charges injected from the pad when the first transistor is turned off.

An integrated circuit, comprising:

• a first transistor having a first breakdown voltage, configured to discharge electrostatic charges from a pad to a first voltage terminal, and comprising:
• a first active region coupled to the pad;
• a second active region coupled between the first active region and the first voltage terminal, wherein the first active region and the second active region have different widths;
• and
• a gate disposed between the first and second active regions;
• and
• at least one second transistor comprising:
• a plurality of third active regions coupled between the second active region and the first voltage terminal, wherein the first active region, the second active region, and the plurality of third active regions have a first conductivity type;
• and
• an electrostatic discharge (ESD) primary circuit having a first terminal coupled to the first active region and a second terminal coupled to the first voltage terminal, wherein the ESD primary circuit has a trigger voltage lower than the first breakdown voltage.