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US 11,380,669 B2Granted
Methods of forming microelectronic devices
AssigneeMicron Technology, Inc.
InventorKunal R. Parekh
Life of this patent
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Abstract
A method of forming a microelectronic device comprises forming a source material around substantially an entire periphery of a base material, and removing the source material from lateral sides of the base material while maintaining the source material over an upper surface and a lower surface of the base material. Related methods and base structures for microelectronic devices are also described.
Claims20
A method of forming a microelectronic device, the method comprising:
- forming a source material around substantially an entire periphery of a base material;
- and
- removing the source material from lateral sides of the base material while maintaining the source material over an upper surface and a lower surface of the base material.
A method of forming a microelectronic device, the method comprising:
- forming a doped semiconductive material over a base material;
- forming an insulative material over the doped semiconductive material;
- forming openings in the insulative material and exposing the doped semiconductive material through the openings;
- and
- epitaxially growing additional semiconductive material from the doped semiconductive material to fill the openings and cover the insulative material.
2 more elements
Dependencies are inferred from the claim text.