Semiconductor memory device and manufacturing method of semiconductor memory device

A semiconductor memory device comprising:

• a substrate extending in a first direction and a second direction intersecting with the first direction;
• a plurality of input/output pads disposed at one side of the substrate;
• a first circuit adjacent to the input/output pads in the first direction;
• a second circuit disposed to be spaced farther apart from the input/output pads in the first direction than the first circuit;
• a first memory cell array overlapping the first circuit;
• a second memory cell array overlapping the second circuit;
• first metal source patterns overlapping the first memory cell array, wherein the first metal source patterns are spaced apart from each other in the second direction;
• and
• a second metal source pattern overlapping the second memory cell array, wherein the second metal source pattern has a width wider than a width of each of the first metal source patterns in the second direction.