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US 11,380,666 B2Granted
Fan-out package with cavity substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Hao Tsai, Techi Wong, Po-Yao Chuang, Shin-Puu Jeng, Meng-Wei Chou, Meng-Liang Lin
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Abstract
Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.
Claims20
A method of forming a semiconductor structure, the method comprising:
- forming a cavity substrate, wherein forming the cavity substrate comprises:
- forming a masking layer on a first side of a substrate;
- patterning the masking layer to form pillar openings over the substrate;
- forming conductive pillars in respective ones of the pillar openings;
- patterning the masking layer to form a cavity opening over the substrate;
- forming a cavity in the substrate below the cavity opening in the masking layer;
- and
- after forming the cavity and the conductive pillars, removing the masking layer, wherein the cavity substrate comprises the substrate;
- attaching a back surface of a semiconductor device to a bottom surface of the cavity in the cavity substrate, a front surface of the semiconductor device having a contact pad;
- after placing the semiconductor device in the cavity, forming a molding compound along sidewalls of the semiconductor device, the molding compound extending into the cavity in the substrate;
- and
- forming a redistribution structure over the cavity substrate, the molding compound, and the semiconductor device, the redistribution structure comprising a conductive line coupled to the contact pad.
9 more elements
A method of forming a semiconductor structure, the method comprising:
- forming a cavity substrate, wherein forming the cavity substrate comprises:
- forming a masking layer on a first side of a substrate;
- patterning the masking layer to form pillar openings over the substrate;
- forming conductive pillars in respective ones of the pillar openings;
- and
- patterning the masking layer and the substrate to form a cavity extending through the masking layer and into the substrate to form the cavity substrate;
- attaching a back surface of a semiconductor device to a bottom surface of the cavity in the cavity substrate, a front surface of the semiconductor device having a contact pad;
- after placing the semiconductor device in the cavity, forming a molding compound along sidewalls of the semiconductor device, the molding compound extending into the cavity such that the molding compound is interposed between the semiconductor device and the substrate and interposed between the semiconductor device and the masking layer;
- and
- forming a redistribution structure over the cavity substrate, the molding compound, and the semiconductor device, the redistribution structure comprising a first conductive line coupled to the contact pad and a second conductive line coupled to a first conductive pillar of the conductive pillars.
7 more elements
A method of forming a semiconductor structure, the method comprising:
- forming a cavity substrate, wherein forming the cavity substrate comprises:
- forming a first masking layer on a first carrier substrate;
- patterning the first masking layer to form pillar openings and a recess opening;
- forming conductive pillars in respective ones of the pillar openings and a sacrificial conductive region in the recess opening;
- after forming the conductive pillars, removing the first masking layer;
- forming a second masking layer over the first carrier substrate;
- forming conductive traces over the second masking layer and the conductive pillars, the conductive traces comprising a first conductive trace over the sacrificial conductive region;
- placing a first substrate over the second masking layer and the conductive traces;
- removing the first carrier substrate;
- removing the sacrificial conductive region;
- removing the first conductive trace to form a cavity in the first substrate;
- and
- removing the second masking layer, wherein the cavity substrate comprises the first substrate;
- attaching a back surface of a semiconductor device to a bottom surface of the cavity in the cavity substrate, a front surface of the semiconductor device having a contact pad;
- after placing the semiconductor device in the cavity, forming a molding compound along sidewalls of the semiconductor device;
- and
- forming a redistribution structure over the cavity substrate, the molding compound, and the semiconductor device, the redistribution structure comprising a conductive line coupled to the contact pad.
14 more elements
Dependencies are inferred from the claim text.