Semiconductor structure comprising at least one system-on-integrated-circuit component

A structure, comprising:

• a first semiconductor die comprising a first bonding structure, the first bonding structure comprising a first dielectric layer and first conductors embedded in the first dielectric layer;
• and
• a second semiconductor die comprising a second bonding structure, the second bonding structure comprising a second dielectric layer, a third dielectric layer covering the second dielectric layer, and second conductors embedded in at least one of the second or third dielectric layer, the first dielectric layer being in contact with the third dielectric layer, wherein thermal conductivity of the first and second dielectric layer is greater than thermal conductivity of the third dielectric layer,
• the first semiconductor die comprises a first semiconductor substrate and a first interconnect structure on the first semiconductor substrate, the first conductors are electrically connected to the first interconnect structure, and the first dielectric layer covers the first interconnect structure,
• the second semiconductor die is stacked over the first semiconductor die,
• the second semiconductor die comprises a second semiconductor substrate, through vias penetrating through the second semiconductor substrate, and a second interconnect structure on a first surface of the second semiconductor substrate,
• the second conductors, the second dielectric layer, and the third dielectric layer are disposed on a second surface the second semiconductor substrate, the second surface is opposite to the first surface, and the second conductors are electrically connected to the second interconnect structure by the through vias.

A structure, comprising:

• a first semiconductor die comprising a first bonding structure, the first bonding structure comprising a first dielectric layer, a second dielectric layer covering the first dielectric layer, and first conductors embedded in the first dielectric layer and the second dielectric layer;
• and
• a second semiconductor die, the second semiconductor die comprising a second bonding structure, the second bonding structure comprising a third dielectric layer, a fourth dielectric layer covering the third dielectric layer, and second conductors embedded in the third dielectric layer and the fourth dielectric layer, the second dielectric layer being in contact with the fourth dielectric layer, and the first conductors being in contact with the second conductors, wherein thermal conductivity of the first dielectric layer and the third dielectric layer is greater than thermal conductivity of second dielectric layer and the fourth dielectric layer,
• the first semiconductor die comprises a first semiconductor substrate and a first interconnect structure on the first semiconductor substrate, the first conductors are electrically connected to the first interconnect structure, and the first dielectric layer and the second dielectric layer cover the first interconnect structure,
• the second semiconductor die is stacked over the first semiconductor die,
• the second semiconductor die comprises a second semiconductor substrate, through vias penetrating through the second semiconductor substrate, and a second interconnect structure on a first surface of the second semiconductor substrate,
• the second conductors, the second dielectric layer, and the third dielectric layer are disposed on a second surface the second semiconductor substrate, the second surface is opposite to the first surface, and the second conductors are electrically connected to the second interconnect structure by the through vias.