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US 11,380,640 B2Granted
Fabrication method of semiconductor die and chip-on-plastic packaging of semiconductor die
AssigneeMagnaChip Semiconductor, Ltd.
InventorsJin Won Jeong, Jae Sik Choi, Byeung Soo Song
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Abstract
A semiconductor chip packaging method includes forming a bump on a wafer, forming a coating film covering the bump, laser grooving the wafer, plasma etching the wafer on which the laser grooving is performed, exposing the bump by removing the coating film covering the bump, fabricating a semiconductor die by performing mechanical sawing of the wafer, and packaging the semiconductor die.
Claims14
A semiconductor chip packaging method, the method comprising:
- forming an interlayer insulating film, metal wirings, and metal pads on a wafer including a semiconductor substrate;
- forming a passivation insulating film on the semiconductor substrate;
- patterning the passivation insulating film to expose the metal pads;
- forming metal bumps connected to the exposed metal pads;
- forming a coating film covering the metal bumps;
- performing a laser grooving process after the coating film is formed on the metal bumps;
- performing a plasma etching process on the grooved coating film;
- exposing the metal bumps by removing the coating film covering the metal bumps;
- fabricating a semiconductor die by performing a mechanical sawing of the wafer;
- and
- packaging the semiconductor die, comprising:
- preparing a flexible substrate comprising a bonding pad;
- attaching an anisotropic conductive film (ACF) comprising conductive balls to the flexible substrate;
- and
- attaching the metal bumps and the bonding pad of the flexible substrate to each other by using the conductive balls.
12 more elements
A fabrication method of a semiconductor die, the method comprising:
- preparing a semiconductor substrate comprising a semiconductor die region and a seal-ring region;
- forming an interlayer insulating film, a metal wiring, and a metal pad on the semiconductor substrate;
- forming a passivation insulating film on the substrate;
- patterning the passivation insulating film;
- forming a metal bump connected to the exposed metal pad;
- forming a coating film covering the metal bump;
- performing a laser grooving process after the coating film is formed on the metal bump;
- performing a plasma etching process on the grooved coating film;
- and
- exposing the metal bump by removing the coating film covering the metal bump,
- wherein a thickness of the interlayer insulating film in the seal-ring region is smaller than a thickness of the interlayer insulating film in the semiconductor die region, and
- wherein a trench isolation is formed in the seal-ring region where the interlayer insulating film, the metal wiring, the metal pad, and the passivation insulating film are formed.
9 more elements
Dependencies are inferred from the claim text.