Semiconductor device including bonding pads and method of manufacturing the same
AssigneeKioxia Corporation
InventorMasayoshi Tagami
Life of this patent
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Abstract
In one embodiment, a semiconductor device includes a substrate, a first interconnection provided above the substrate, and a first pad provided on the first interconnection. The device further includes a second pad provided on the first pad, and a second interconnection provided on the second pad. Furthermore, the first pad includes a first layer provided in a first insulator above the substrate, and a second layer that is provided in the first insulator via the first layer and is in contact with the first interconnection, or the second pad includes a third layer provided in a second insulator above the substrate, and a fourth layer that is provided in the second insulator via the third layer and is in contact with the second interconnection.
Claims20
A semiconductor device comprising:
- a substrate;
- a first interconnection provided above the substrate;
- a first pad provided on the first interconnection;
- a second pad provided on the first pad;
- and
- a second interconnection provided on the second pad,
- wherein
- the first pad includes a first layer provided in a first insulator above the substrate, and a second layer that is provided in the first insulator via the first layer and is directly in contact with the first interconnection, or
- the second pad includes a third layer provided in a second insulator above the substrate, and a fourth layer that is provided in the second insulator via the third layer and is directly in contact with the second interconnection.
A method of manufacturing a semiconductor device, comprising:
- forming a first interconnection above a first substrate;
- forming a first pad on the first interconnection;
- forming a second interconnection above a second substrate;
- forming a second pad on the second interconnection;
- and
- disposing the second pad on the first pad by bonding the first pad formed on the first substrate with the second pad formed on the second substrate,
- wherein
- the first pad is formed so as to include a first layer provided in a first insulator above the first substrate, and a second layer that is provided in the first insulator via the first layer and is directly in contact with the first interconnection, or
- the second pad is formed so as to include a third layer provided in a second insulator above the second substrate, and a fourth layer that is provided in the second insulator via the third layer and is directly in contact with the second interconnection.
Dependencies are inferred from the claim text.