Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSe-Ho You, Seongho Shin, Bangweon Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a substrate, a first semiconductor chip buried in the substrate, a first antenna pattern, a second antenna pattern, and outer terminals. A bottom surface of the substrate may include first and second regions spaced apart from each other. The first semiconductor chip may have a first active surface that is directed to the top surface of a core portion of the substrate. The first antenna pattern may be provided on the top surface of the substrate and electrically connected to the first semiconductor chip. The outer terminals may be provided on the first region of the bottom surface of the substrate, and the second antenna pattern may be provided on the second region of the bottom surface of the substrate.
Claims20
A semiconductor device, comprising:
- a substrate, a bottom surface of the substrate including first and second regions spaced apart from each other;
- a first semiconductor chip buried in the substrate, the first semiconductor chip having a first active surface that is directed to a top surface of a core portion of the substrate;
- a first antenna pattern provided on the top surface of the substrate and electrically connected to the first semiconductor chip;
- a second antenna pattern provided on the first region of the bottom surface of the substrate;
- and
- outer terminals provided on the second region of the bottom surface of the substrate.
A semiconductor device, comprising:
- a core portion having a first surface and a second surface, which are opposite to each other;
- a first buildup portion and a second buildup portion provided on the first surface and the second surface, respectively, each of the first and second buildup portions comprising a plurality of insulating layers and a plurality of interconnection layers, which are sequentially stacked;
- a first semiconductor chip, which is provided in a first mounting region formed by partially removing the core portion and is electrically connected to the first buildup portion;
- a first antenna pattern provided on a surface of the first buildup portion;
- a second antenna pattern provided on a surface of the second buildup portion;
- and
- outer terminals provided on the surface of the second buildup portion,
- wherein the second antenna pattern is provided on a first region of the second buildup portion, and
- the outer terminals are provided on a second region of the second buildup portion, which is different from the first region.
A semiconductor device, comprising:
- a first redistribution substrate;
- a first semiconductor chip having a first active surface in contact with a bottom surface of the first redistribution substrate;
- a mold layer disposed on the bottom surface of the first redistribution substrate and covering a bottom surface of the first semiconductor chip;
- a second redistribution substrate disposed on the mold layer and below the first semiconductor chip in a direction perpendicular to the bottom surface of the first redistribution substrate;
- conductive portions provided at a side of the first semiconductor chip to electrically connect the first and second redistribution substrates to each other;
- a first antenna pattern, which is provided on a top surface of the first redistribution substrate and is electrically connected to the first semiconductor chip through the first redistribution substrate;
- a second antenna pattern provided on a first region of a bottom surface of the second redistribution substrate;
- and
- an outer terminal provided on a second region of the bottom surface of the second redistribution substrate, the first and second regions being spaced apart from each other.
Dependencies are inferred from the claim text.