Radiofrequency device
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsHui Feng Chen, Guang Yang, Jinjian Ouyang, Linshan Yuan, Chin-Chun Huang, Wen Yi Tan
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AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsHui Feng Chen, Guang Yang, Jinjian Ouyang, Linshan Yuan, Chin-Chun Huang, Wen Yi Tan
Estimating the term…
A radiofrequency device includes a semiconductor substrate, an inductor structure, a shielding structure, and a mask pattern. The semiconductor substrate includes a first region and a second region. The inductor structure is disposed on the first region of the semiconductor substrate. The shielding structure is disposed on the first region of the semiconductor substrate and located between the inductor structure and the semiconductor substrate in a vertical direction. The mask pattern is disposed on the semiconductor substrate. A first portion of the mask pattern is disposed on the shielding structure and directly contacts the shielding structure, and a top surface of the shielding structure is completely covered by the first portion of the mask pattern.
A radiofrequency device, comprising:
Dependencies are inferred from the claim text.