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US 11,380,615 B2Granted
Tight pitch wirings and capacitor(s)
AssigneeGlobalfoundries Inc.
InventorsAnthony K. Stamper, Daisy A. Vaughn, Stephen R. Bosley, Zhong-Xiang He
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.
Claims20
A method comprising:
- depositing a first conductive material on an underlying dielectric material;
- depositing an insulator material on the first conductive material;
- patterning the first conductive material and the insulator material simultaneously to form a bottom plate and an insulator layer of a capacitor;
- depositing a second conductive material on the insulator layer and the underlying dielectric material;
- and
- patterning the second conductive material to form a top plate of the capacitor, a spacer and a plurality of wiring layers on the underlying dielectric material, wherein the plurality of wiring layers and the top plate are of a same stack.
3 more elements
A method comprising:
- forming a capacitor comprising:
- forming a bottom plate of a first conductive material;
- forming an insulator layer on the bottom plate;
- and
- forming a top plate of a second conductive material on the insulator layer;
- forming a plurality of wirings on a same level as the bottom plate, composed of the second conductive material, wherein both the bottom plate and the plurality of wirings contact the same underlying insulator material;
- and
- forming at least one sidewall spacer comprising conductive material on a sidewall of the bottom plate and interlevel dielectric material separating the at least one sidewall spacer from the plurality of wirings.
5 more elements
A method comprising:
- forming a metal insulator metal (MIM) capacitor comprising a bottom plate, an insulator material on the bottom plate, and a top plate on the insulator material;
- forming a plurality of wirings on a same underlying insulator material as the bottom plate and composed of a same continuous stack as the top plate of the MIM capacitor, wherein the bottom plate and the plurality of wirings contact the same underlying insulator material;
- forming an interlevel dielectric material separating the plurality of wires from one another and from the bottom plate of the MIM capacitor;
- forming interconnect structures extending within the interlevel dielectric material and contacting, from a top side, the top plate and the bottom plate of the MIM capacitor and at least one of the plurality of wirings, wherein forming of the interconnect structure contacting the bottom plate passes through the insulator material on top of the bottom plate;
- forming a spacer composed of a same material as the top plate of the MIM capacitor and the plurality of wirings;
- and
- forming one or more metallized vias contacting one of the plurality of wirings from a bottom side.
4 more elements
Dependencies are inferred from the claim text.