Repurposed seed layer for high frequency noise control and electrostatic discharge connection
AssigneeQUALCOMM Incorporated
InventorsYue Li, Li-Sheng Weng, Yangyang Sun
Life of this patent
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Abstract
An integrated circuit (IC) package is described. The IC package includes a die, having a pad layer structure on back-end-of-line layers on a substrate. The die also includes a metallization routing layer on the pad layer structure, and a first under bump metallization layer on the metallization routing layer. The IC package also includes a patterned seed layer on a surface of the die to contact the first under bump metallization layer. The IC package further includes a first package bump on the first under bump metallization layer.
Claims12
An integrated circuit (IC) package, comprising:
- a die, including a pad layer structure on back-end-of-line layers on a substrate, a metallization routing layer on the pad layer structure, and a first under bump metallization layer on the metallization routing layer;
- a patterned seed layer on a surface of the die to contact the first under bump metallization layer;
- a first package bump on the first under bump metallization layer;
- a first passivation layer on the metallization routing layer;
- a second passivation layer on the first passivation layer;
- a second under bump metallization layer on the second passivation layer to contact the metallization routing layer;
- a second package bump on the second under bump metallization layer, in which the patterned seed layer couples the first under bump metallization layer to the second under bump metallization layer.
An integrated circuit (IC) package, comprising:
- a die, including a pad layer structure on back-end-of-line layers on a substrate, means for routing on the pad layer structure, and a first under bump metallization layer on the routing means;
- a patterned seed layer on a surface of the die to contact the first under bump metallization layer;
- a first package bump on the first under bump metallization layer;
- a first passivation layer on the routing means;
- a second passivation layer on the first passivation layer;
- a second under bump metallization layer on the second passivation layer to contact the routing means;
- a second package bump on the second under bump metallization layer, in which the patterned seed layer couples the first under bump metallization layer to the second under bump metallization layer to short the first package bump to the second package bump.
Dependencies are inferred from the claim text.