Semiconductor device, electronic component and method

An electronic component, comprising:

• a semiconductor device comprising a galvanically isolated signal transfer coupler comprising a contact pad;
• wherein the contact pad comprises:
• a metallic base layer;
• a metallic diffusion barrier layer arranged on the metallic base layer;
• and
• a metallic wire bondable layer arranged on the metallic diffusion barrier layer,
• wherein the metallic diffusion barrier layer comprises:
• a first portion having a first surface and a second surface opposing the first surface, the first surface of the first portion having a curved surface at the periphery, the first portion extending in a transverse plane and having a width;
• and
• a second portion protruding from the second surface intermediate the width of the first portion;
• and
• a bidirectional signal transfer path coupled to the semiconductor device;
• wherein the galvanically isolated signal transfer coupler is coupled in the bidirectional signal transfer path, is coupled by a bond wire to the semiconductor device and provides reinforced galvanic isolation for a surge pulse isolation voltage VIOSM of at least 10kVpeak.