Chip-on-wafer structure with chiplet interposer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWeiming Chris Chen, Kuo-Chiang Ting, Shang-Yun Hou
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Abstract
A method of forming a semiconductor structure includes bonding a first die and a second die to a first side of a first interposer and to a first side of a second interposer, respectively, where the first interposer is laterally adjacent to the second interposer; encapsulating the first interposer and the second interposer with a first molding material; forming a first recess in a second side of the first interposer opposing the first side of the first interposer; forming a second recess in a second side of the second interposer opposing the first side of the second interposer; and filling the first recess and the second recess with a first dielectric material.
Claims20
A method of forming a semiconductor structure, the method comprising:
- bonding a first die and a second die to a first side of a first interposer and to a first side of a second interposer, respectively, wherein the first interposer is laterally adjacent to the second interposer;
- encapsulating the first interposer and the second interposer with a first molding material;
- forming a first recess in a second side of the first interposer opposing the first side of the first interposer, wherein a bottom of the first recess is between the first side of the first interposer and the second side of the first interposer, wherein the bottom of the first recess exposes a first surface of a first substrate of the first interposer;
- forming a second recess in a second side of the second interposer opposing the first side of the second interposer;
- and
- filling the first recess and the second recess with a first dielectric material, wherein the first dielectric material contacts and extends along the first surface of the first substrate.
A method of forming a semiconductor structure, the method comprising:
- attaching a first die and a second die to a first interposer and a second interposer, respectively, wherein after the attaching, the first die is laterally adjacent to the second die, and the first interposer is laterally adjacent to the second interposer, wherein the first interposer comprises a first substrate and a first through-substrate via (TSV) in the first substrate;
- surrounding the first interposer and the second interposer with a first molding material;
- forming a first recess in a first surface of the first interposer distal from the first die, wherein after forming the first recess, the first TSV extends into the first recess;
- forming a second recess in a first surface of the second interposer distal from the second die;
- and
- filling the first recess and the second recess with a polymer layer.
A method of forming a semiconductor structure, the method comprising:
- embedding a first interposer and a second interposer laterally adjacent to the first interposer in a first molding material, wherein the first interposer has a first through-substrate via (TSV), wherein a first end surface of the first TSV is between a first side of the first interposer and a second opposing side of the first interposer;
- forming a redistribution structure over the first molding material at the first side of the first interposer, wherein the redistribution structure extends continuously from the first interposer to the second interposer;
- attaching a first die to the redistribution structure at the first side of the first interposer;
- thinning the first interposer from the second side of the first interposer to expose the first end surface of the first TSV;
- after thinning the first interposer, forming a first recess at the second side of the first interposer by removing a first portion of a substrate of the first interposer contacting the first TSV, wherein the first recess exposes sidewalls of the first TSV;
- and
- filling the first recess with a dielectric material.
Dependencies are inferred from the claim text.