Semiconductor device and method of manufacturing semiconductor device
AssigneeMicro Module Technology Co., Ltd.
InventorFumikazu Harazono
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AssigneeMicro Module Technology Co., Ltd.
InventorFumikazu Harazono
Estimating the term…
A source terminal and a gate terminal are connected to a wiring pattern of the first substrate. A diode is provided under a second substrate such that an anode is connected to a wiring pattern of the second substrate. A plate-like portion of the first electrode is provided between the switching element and the diode, and a linking section of the first electrode connects the plate-like portion and the wiring pattern of the first substrate. A second electrode being substantially columnar and connecting the wiring pattern of the first substrate and the wiring pattern of the second substrate is provided in an opposite side to the linking section with the switching element interposed. A thickness of the plate-like portion of the first electrode is less than or equal to a thickness of each of the wiring pattern of the first substrate and the wiring pattern of the second substrate.
A semiconductor device comprising:
A method of manufacturing a semiconductor device, the method comprising the steps of:
Dependencies are inferred from the claim text.