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US 11,380,606 B2Granted
Semiconductor device including via structure with head and body portions
AssigneeSamsung Electronics Co., Ltd.
InventorsEunji Kim, Sungdong Cho, Kwangwuk Park, Sangjun Park, Daesuk Lee, Hakseung Lee
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Abstract
A semiconductor device includes a semiconductor substrate having an active surface on which semiconductor elements are provided. An interlayer insulating film is provided on the semiconductor substrate. A first via structure passes through the semiconductor substrate. The first via structure has a first diameter. A second via structure passes through the semiconductor substrate. The second via structure has a second diameter that is greater than the first diameter. The first via structure has a step portion that is in contact with the interlayer insulating film.
Claims18
A semiconductor device, comprising:
- a semiconductor substrate including an active surface;
- semiconductor elements disposed on the active surface;
- an interlayer insulating film disposed on the semiconductor substrate;
- a first via structure passing through the semiconductor substrate, the first via structure having a first diameter;
- and
- a second via structure passing through the semiconductor substrate, the second via structure having a second diameter that is greater than the first diameter,
- wherein the first via structure comprises:
- a head portion having a first width in a direction parallel to an upper surface of the semiconductor substrate;
- a body portion having a second width in the direction parallel to the upper surface of the semiconductor substrate, wherein the second width is less than the first width;
- and
- a step portion that is in contact with the interlayer insulating film, the step portion being disposed between the head portion and the body portion,
- wherein a lower surface of the head portion is substantially parallel to the upper surface of the semiconductor substrate,
- wherein the first via structure comprises a first via insulating film having a substantially uniform thickness along a sidewall of a via hole and a first barrier film having a substantially uniform thickness along a sidewall of the first via insulating film, and
- wherein the sidewall of the via hole of the first via structure comprises at least one undercut portion having a protruding shape in the semiconductor substrate and the first barrier film has a protruding shape corresponding to the undercut portion.
11 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- an interlayer insulating film disposed on the semiconductor substrate;
- a signal via structure passing through both the semiconductor substrate and the interlayer insulating film;
- and
- a power via structure passing through both the semiconductor substrate and the interlayer insulating film,
- wherein the power via structure passes through a device isolation film in the semiconductor substrate,
- wherein the signal via structure comprises:
- a head portion having a first width in a direction parallel to an upper surface of the semiconductor substrate;
- and
- a body portion having a second width in the direction parallel to the upper surface of the semiconductor substrate, the second width being smaller than the first width,
- wherein a lower surface of the head portion is substantially parallel to the upper surface of the semiconductor substrate,
- wherein the signal via structure comprises a first via insulating film having a substantially uniform thickness along a sidewall of a via hole and a first barrier film having a substantially uniform thickness along a sidewall of the first via insulating film, and
- wherein the sidewall of the via hole of the signal via structure comprises at least one undercut portion having a protruding shape in the semiconductor substrate and the first barrier film has a protruding shape corresponding to the undercut portion.
10 more elements
A semiconductor package, comprising:
- a first semiconductor device comprising a cell region and a peripheral region;
- and
- a second semiconductor device stacked on the first semiconductor device, the second semiconductor device being electrically connected to the first semiconductor device,
- wherein the first semiconductor device comprises a semiconductor substrate and an interlayer insulating film disposed on the semiconductor substrate,
- wherein the first semiconductor device comprises a first via structure and a second via structure in the peripheral region,
- wherein the first via structure passes through the semiconductor substrate and the first via structure has a first diameter, and the second via structure passes through the semiconductor substrate and has a second diameter, which is greater than the first diameter,
- wherein a sidewall of a via hole of the first via structure comprises at least one undercut portion having a protruding shape in the semiconductor substrate,
- wherein the first via structure comprises:
- a head portion having a first width in a direction parallel to an upper surface of the semiconductor substrate;
- and
- a body portion having a second width in the direction parallel to the upper surface of the semiconductor substrate,
- wherein the second width is less than the first width,
- wherein a lower surface of the head portion is substantially parallel to the upper surface of the semiconductor substrate,
- wherein the first via structure comprises a first via insulating film having a substantially uniform thickness along a sidewall of a via hole and a first barrier film having a substantially uniform thickness along a sidewall of the first via insulating film, and
- wherein the first barrier film has a protruding shape corresponding to the undercut portion.
12 more elements
Dependencies are inferred from the claim text.