Integrated circuit package and method of forming same

A semiconductor structure comprising:

• a die structure, the die structure comprising a first integrated circuit die encapsulated in a first encapsulant;
• a second encapsulant over the die structure and the first encapsulant, wherein a bottommost surface of the second encapsulant is above a topmost surface of the first encapsulant;
• a die stack embedded in the second encapsulant, the die stack comprising a second integrated circuit die, a backside of the second integrated circuit die being in physical contact with a backside of the first integrated circuit die;
• and
• a heat dissipation structure embedded in the second encapsulant, the heat dissipation structure being bonded to the die structure at an interface between the first integrated circuit die and the first encapsulant.

A semiconductor structure comprising:

• a die structure, the die structure comprising a first integrated circuit die;
• a die stack attached to the first integrated circuit die, the die stack comprising a second integrated circuit die, a backside of the second integrated circuit die being in physical contact with a backside of the first integrated circuit die;
• a base structure attached to the die stack, the die stack being interposed between the base structure and the first integrated circuit die, a width of the base structure being greater than a width of the die stack;
• a heat dissipation structure attached to the die structure adjacent to the die stack, wherein the heat dissipation structure has a first sidewall facing toward the die stack and a second sidewall facing away from the die stack;
• and
• an encapsulant over the die structure, wherein the die stack and the heat dissipation structure extends through the encapsulant, and wherein the first sidewall and the second sidewall of the heat dissipation structure are in physical contact with the encapsulant.