US 11,380,589 B2Granted

Selective removal of semiconductor fins

AssigneeTessera, Inc.

InventorsVeeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz

Life of this patent

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Abstract

An array of semiconductor fins is formed on a top surface of a substrate. A dielectric material liner is formed on the surfaces of the array of semiconductor fins. A photoresist layer is applied and patterned such that sidewalls of an opening in the photoresist layer are parallel to the lengthwise direction of the semiconductor fins, and are asymmetrically laterally offset from a lengthwise direction passing through the center of mass of a semiconductor fin to be subsequently removed. An angled ion implantation is performed to convert a top portion of dielectric material liner into a compound material portion. The compound material portion is removed selective to the remaining dielectric material liner, and the physically exposed semiconductor fin can be removed by an etch or converted into a dielectric material portion by a conversion process. The dielectric material liner can be removed after removal of the semiconductor fin.

Claims20

Dependent claims

A method of forming a semiconductor structure comprising:

forming a plurality of semiconductor fins on a substrate;
forming a material liner on physically exposed surfaces of said plurality of semiconductor fins and said substrate;
applying and patterning a photoresist layer over said material liner, wherein at least a semiconductor fin is positioned between a pair of sidewalls of said patterned photoresist layer;
implanting an implant material into a top portion of said material liner employing an angled implantation process, wherein a first sidewall portion of said material liner located on one side of said semiconductor fin and a top portion of said material liner are converted into a compound material portion, and said implant material is not implanted into a second sidewall portion of said material liner located on another side of semiconductor fin;
removing said compound material portion selective to remaining portions of said material liner that are not implanted with said implant material;
and
converting at least a portion of said semiconductor fin into a dielectric material portion, wherein said remaining portions of said material liner laterally surrounds said dielectric material portion.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/662,845Filed 24 Oct 2019 · division
Priority: 8 Jul 2014
Published: US 2020/0058554 A120 Feb 2020
Granted: 5 Jul 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification26 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/0243
Of fin field-effect transistors [FinFET]: using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide…
H10D 30/62
Insulated-gate field-effect transistors [IGFET]: fin field-effect transistors [FinFET]

Family

Application14/325,547Parent of this division · filed 8 Jul 2014
Application15/450,829Parent of this division · filed 6 Mar 2017
US 9,613,954 B2Parent of this division · filed 4 Apr 2017
US 2020/0058554 A1Pre-grant publication · published 20 Feb 2020
US 10,607,890 B2Parent of this division
US 2016/0013183 A1Published application
US 2017/0178960 A1Published application
US 11,380,589 B2This patent

From the US filing history. Foreign family members aren’t listed.