Semiconductor device and manufacturing method of semiconductor device including a through electrode for connection of wirings

A manufacturing method of a semiconductor device, comprising:

• arranging a cylindrical insulating film in a semiconductor substrate, wherein the cylindrical insulating film penetrates the semiconductor substrate;
• forming a plurality of front surface side pads adjacent to a front surface of the semiconductor substrate;
• removing a portion of the semiconductor substrate that is:
• adjacent to the plurality of front surface side pads, and
• on an inner side of the cylindrical insulating film;
• arranging a conductor layer on the inner side of the cylindrical insulating film after the removal of the portion of the semiconductor substrate, wherein each front surface side pad of the plurality of front surface side pads has a specific surface in contact with the conductor layer on the inner side of the cylindrical insulating film;
• and
• arranging a back surface side pad on a back surface of the semiconductor substrate, wherein the back surface side pad is connected to the plurality of front surface side pads via the conductor layer.