Method and process using dual memorization layer for multi-color spacer patterning

A method of forming patterned layers on a substrate using a self-aligned multiple patterning (SAMP) process, comprising:

• providing a SAMP array pattern, the SAMP array pattern comprising a plurality of features;
• providing a first layer to be etched at least in part according to the SAMP array pattern;
• providing an etch stop layer on the first layer;
• providing a first memorization layer on the etch stop layer and between the SAMP array pattern and the first layer;
• providing a second memorization layer between the SAMP array pattern and the first memorization layer;
• providing a masking layer having a masking layer pattern overlying the SAMP array pattern;
• utilizing the masking layer to selectively etch at least a first feature of the plurality of features and to etch the first memorization layer to form a first memorization layer pattern, the first memorization layer pattern related to the masking layer pattern and exposing a first portion of the etch stop layer, the first layer protected by the etch stop layer;
• removing the masking layer;
• removing at least a second feature of the plurality of features to form at least one opening in the SAMP array pattern;
• etching the second memorization layer according to a pattern of the at least one opening in the SAMP array pattern to form a second memorization layer pattern, the etch stop layer protecting the first layer during the etching of the second memorization layer;
• etching the exposed first portion of the etch stop layer and the first layer while utilizing the first memorization layer pattern to form a first structure pattern in the first layer;
• and
• etching the first memorization pattern, a second portion of the etch stop layer, and the first layer utilizing the second memorization layer pattern to form a second structure pattern in the first layer.